<dd id="9rwgs"><noscript id="9rwgs"></noscript></dd>

      助手標題  
      全文文獻 工具書 數字 學術定義 翻譯助手 學術趨勢 更多
      查詢幫助
      意見反饋
         transistor 在 無線電電子學 分類中 的翻譯結果: 查詢用時:0.014秒
      圖標索引 在分類學科中查詢
      所有學科
      無線電電子學
      電力工業
      物理學
      金屬學及金屬工藝
      自動化技術
      計算機硬件技術
      人物傳記
      安全科學與災害防治
      武器工業與軍事技術
      更多類別查詢

      圖標索引 歷史查詢
       

      transistor
      相關語句
        晶體管
          The Research about the Noise for the Reliability of High Power Semiconductor Laser and Bipolar Transistor
          噪聲用于半導體大功率激光器及雙極晶體管可靠性研究
      短句來源
          Study on Planar Resonant Tunneling Diode and Resonant Tunneling Transistor and Their Applications
          平面型共振隧穿二極管與共振隧穿晶體管的研究與應用
      短句來源
          FREQUENCY STABILITY OF TRANSISTOR FEEDBACK OSCILLATORS
          晶體管反饋振蕩器的頻率穩定
      短句來源
          A TRANSISTOR SAMPLING OSCILLOSCOPE WITH A BANDWIDTH GREATER THAN 1000 Me
          頻寬1000兆赫的晶體管取樣示波器
      短句來源
          A MULTI-STAGE TRANSISTOR IF AMPLIFIER
          多級晶體管中頻放大器
      短句來源
      更多       
        
          A Two-stage Avalanche Transistor Pulser with 1.5ns Pulse Width and 200V Pulse Amplitude,with the Stage Consisting of Parallel Two Transistors
          寬度為1.5ns、幅度達200V的雙并聯兩級雪崩三極脈沖產生器
      短句來源
          Experimental Extraction of Model Parameter for 3μm Process MOS Transistor
          3μm工藝MOS模型參量的實驗提取
      短句來源
          Inter-Transistor Matching Network Design of the Microwave Power Transistor
          微波功率晶體內匹配網絡設計
      短句來源
          Inter-Transistor Matching Network of the Microwave Power Transistor
          微波功率晶體內匹配網絡
      短句來源
          The Plane Mololithic Power Darlington Transistor
          平面型單片功率達林頓復合
      短句來源
      更多       
        “transistor”譯為未確定詞的雙語例句
          1GHz High-power Transistor Microstrip Oscillator
          1GHz大功率晶體三極管微帶振蕩器
      短句來源
          S-band YIG Tuned Transistor Oscillator
          S波段YIG調諧晶體三極管振蕩器
      短句來源
          THE D.C.CHARACTERISTICS OF MICROWAVE GaAs SCHOTTKY BARRIER GATE FIELDEFFECT TRANSISTOR
          砷化鎵肖特基勢壘柵微波場效應晶體管的直流特性
      短句來源
          A Transient Analysis and Design of the Sense Amplifier of Single transistor Cell MOS RAM
          單管單元MOS RAM讀出放大器的瞬態分析與設計
      短句來源
          Modulation-Doped (AI,Ga)As-GaAs Heterojunction Two-Dimensional Electron Gas Field-Effect Transistor (TEGFET)
          調制摻雜(Al,Ga)As-GaAs異質結二維電子氣場效應晶體管(TEGFET)
      短句來源
      更多       
      查詢“transistor”譯詞為用戶自定義的雙語例句

          我想查看譯文中含有:的雙語例句
      例句
      為了更好的幫助您理解掌握查詢詞或其譯詞在地道英語中的實際用法,我們為您準備了出自英文原文的大量英語例句,供您參考。
        transistor
      This is our first report on the high performance 1 mm AlGaN/GaN high electron mobility transistor (HEMT) which was developed using home-made AlGaN/GaN epitaxy structures based on SiC substrate.
            
      The design and fabrication on gate type resonant tunneling transistor
            
      In light of fabricating resonant tunneling diode (RTD), in this paper a GaAs-based resonant tunneling transistor with gate structure (GRTT) has been designed and fabricated successfully.
            
      The electrokinetic behavior of silicon plates covered with an oxide film is compared to the electrode behavior of a similar board of an ion-selective field-effect transistor.
            
      The meter consists of a semiconductor magnetic-field sensitive double-collector transistor (magnetotransistor) with ferromagnetic concentrators of the magnetic field, differential amplifier, and digital voltmeter.
            
      更多          


      This paper describes a detailed analysis of conversion properties of junction transistors. A new parameter "the effective conversion transconductance" is introduced for characterizing transistor converters. The effective conversion transcon-ductance of transistor converters using a PNP transistor operated at different oscillatory conditions and at various signal frequencies are studied. Main differences between transistor converters and vacuum tube converters are compared.

      本文討論面結型晶體管變頻性能的分析。提出新參數“有效變頻跨導”來決定晶體管變頻器的特性。研究晶體管變頻器在各種振蕩狀況下及不同訊號頻率時對有效變頻跨導的影響。比較晶體管變頻器與電子管變頻器的主要區別。

      A simple method to measure and analyse the factors affecting the maximum frequency of oscillation of transistors is described. From the maximum frequencies of oscillation measured with certain external series resistances connected in the base and collector circuits, the frequency of zero db current gain fT, base resistance rb, collector capacitance Cc, and also the intrinsic characteristic frequency fTd of the transistor can be deduced. The method of analysis is also discussed in the case when the...

      A simple method to measure and analyse the factors affecting the maximum frequency of oscillation of transistors is described. From the maximum frequencies of oscillation measured with certain external series resistances connected in the base and collector circuits, the frequency of zero db current gain fT, base resistance rb, collector capacitance Cc, and also the intrinsic characteristic frequency fTd of the transistor can be deduced. The method of analysis is also discussed in the case when the collector conductance introduced by base width modulation plays an important role in limiting the maximum frequency of oscillation of the transistor. The connection between the maximum frequency of oscillation of drift transistor and its external parameters is discussed finally. It is concluded that when proper corrections are made for drift transistors, not only fTd, rb, and Cc, but also the magnitude of drift field in the base region of drift transistors can be deduced.

      本文討論了晶體管最高振蕩頻率有關因素的一種測量分析方法。利用在基極和集電極迴路中串入外加串聯電阻后測量最高振蕩頻率的變動,可以同時獲得晶體管共發射極短路電流放大零增益頻率f_T、基極電阻γ_b、集電極電容C_c以及本征的特性頻率f_(Td)。討論了當基極層厚度調制作用所致的集電極電導起作用時的分析方法。最后分析了漂移晶體管最高振蕩頻率與晶體管外部參數的關系,結果說明,上述方法在考慮了適應于漂移晶體管的修正步驟后,除同樣能得到f_(Td)、γ_b、C_c等有關參數外,還可以分析得出漂移晶體管基極層中的漂移電場強度。

      One of the important requirements on oscillators is to have stable frequency of oscillation. The frequency stability problem for vacuum tube oscillators has been extensively in-estigated, however, the same problem for transistor oscillators has not been adequately treated. It is therefore the purpose of this paper to offer a detailed analysis on the frequency stability of transistor feedback oscillators.General equation of oscillations for feedback oscillators are first derived by using the linear...

      One of the important requirements on oscillators is to have stable frequency of oscillation. The frequency stability problem for vacuum tube oscillators has been extensively in-estigated, however, the same problem for transistor oscillators has not been adequately treated. It is therefore the purpose of this paper to offer a detailed analysis on the frequency stability of transistor feedback oscillators.General equation of oscillations for feedback oscillators are first derived by using the linear analysis based on the cascade parameter matrix representation of 2-port networks. Analysis is then applied to the various types of transistor feedback oscillators. Various types of the equivalent circuits for the common-emitter network and various forms of feedback networks using only pure reactive elements are used in deriving the equationsof oscillations. Elements of the feedback networks are assumed to remain unchanged andparameters of the transistor networks are assumed to be varied in the investigation of the frequency drift of transistor oscillators.Feedback networks are grouped into three major groups according to their geometries: the three-arm π configurations, the four-arm and the five-arm configurations. Conditions of oscillations, conditions of frequency stability for oscillators using these groups of feedback networks are discussed and results are summarised into three tables for ready references.

      振蕩器的一項重要性能是振蕩頻率的穩定度,對電子管振蕩器的頻率穩定性能已有比較長時期的研究。然而,對晶體管振蕩器頻率穩定性能的研究則尚欠完善。本文將對晶體管反饋振蕩器的頻率穩定性能作比較詳細的研討。 根據四端網絡分析及級聯參數矩陣表示法,首先推導反饋振蕩器的通用振蕩方程,然后對共發射極網絡的各種等效電路以及對各種純電抗元件的反饋網絡的級聯參數進行分析,用這些網絡形成各種晶體管反饋振蕩器,并推導這些振蕩器的振蕩方程。根據振蕩方程對這些振蕩器的振蕩性能,包括振蕩頻率的穩定性能,進行分析及比較。 假設反饋網絡所用外加電抗元件固定不變,而晶體管參數改變(包括晶體管的輸出輸入電阻,輸出輸入電容,電流放大系數的虛數部分,負載電阻等的改變),對由于這些參數改變所引起的振蕩頻率漂移作了分析及比較。 根據所用反饋網絡的幾何構造,將反饋網絡分成三臂π形,四臂及五臂網絡等三類,對采用這三類網絡而組成的晶體管振蕩器的振蕩性能進行分析,重要結果分別在三表中列出,供研究及設計者參考。

       
      << 更多相關文摘    
      圖標索引 相關查詢

       


       
      CNKI小工具
      在英文學術搜索中查有關transistor的內容
      在知識搜索中查有關transistor的內容
      在數字搜索中查有關transistor的內容
      在概念知識元中查有關transistor的內容
      在學術趨勢中查有關transistor的內容
       
       

      CNKI主頁設CNKI翻譯助手為主頁 | 收藏CNKI翻譯助手 | 廣告服務 | 英文學術搜索
      版權圖標  2008 CNKI-中國知網
      京ICP證040431號 互聯網出版許可證 新出網證(京)字008號
      北京市公安局海淀分局 備案號:110 1081725
      版權圖標 2008中國知網(cnki) 中國學術期刊(光盤版)電子雜志社
      下载黄色图片