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            epitaxial
            相關語句
              外延
                Fabrication of SOI Material Using Epitaxial Layer Transfer of Porous Silicon and Luminescence Study of Modified Porous Silicon
                多孔硅外延層轉移SOI新材料制備與改性多孔硅發光性能的研究
            短句來源
                Preparation and Optical Property of Ⅲ-V Compound Semiconductor Materials of GaN Epitaxial Film and InAs Quantum Dots
                Ⅲ-V族化合物半導體材料GaN外延膜和InAs量子點的制備及光學特性研究
            短句來源
                THE EXAMINATION OF DISLOCATIONS ON GaAs-ALGaAs DOUBLE HETEROJUNCTION EPITAXIAL WAFER
                GaAs-AlGaAs雙異質結(DH)外延片的位錯檢測
            短句來源
                Epitaxial Technique Progress of Semiconductor Compound
                半導體化合物外延技術的進展
            短句來源
                MEASUREMENT OF THE PARAMETERS OF SUBMICRO GaAs EPITAXIAL LAYER BY ELECTROCHEMICAI C-V METHOD
                電化學C-V法測量亞微米GaAs外延層的參數
            短句來源
            更多       
              外延生長
                GaAs Epitaxial Growth of n~+-n-n~- Multilayer for Dual-Gate FETs
                用于雙柵FET的n~+-n-n~-GaAs多層外延生長
            短句來源
                An Improvement on the Transition Region of Si N~+/NP Layer by Continuous Conversion-Type Epitaxial Technology
                硅N~+/NP連續反型外延生長過渡區的改善
            短句來源
                A Thermodynamical Analysis of Carbon Contamination in Silicon Epitaxial Growth from SiCl_4
                SiCl_4外延生長硅晶體中碳沾污的熱力學分析
            短句來源
                A Termodynamical Analysis of Silicon Epitaxial Growth Temperature Confined by Trace H_2O and O_2 in H_2 Atmosphere
                H_2氣氛中微量H_2O和O_2對硅外延生長溫度限制的熱力學分析
            短句來源
                Metalorganic growth of epitaxial films of CdTe and Hg-CdTe on sapphire substraes
                在蘭寶石襯底上金屬有機外延生長CdTe和HgCdTe薄膜
            短句來源
            更多       
              “epitaxial”譯為未確定詞的雙語例句
                A p~+-n_1 -n_2 -n~(++) Multilayer Vapor Phase Epitaxial Growth Technique for GaAs IMPATT Diodes
                用于GaAs IMPATT二極管的p~+-n_1-n_2-n~(++)多層汽相外延生長
            短句來源
                A NEW METHOD USED FOR SOLUTION EPITAXIAL GROWTH OF Ga_(1-x)Al_xAs
                一種液相外延Ga_(1-x)Al_xAs的新方法
            短句來源
                X-Ray Diffraction Intensity Ratio Method for the Thickness Measurement of Ternary Heterogeneous Epitaxial Layers on GaAs Substrate
                GaAs三元異質外延層厚度測量的X射線衍射比強度法
            短句來源
                Liquid Phase Epitaxial Growth of In_(0.53)Ga_(0.47) As
                In_(0.53)Ga_(0.47)As的液相外延生長
            短句來源
                EXPERIMENTAL STUDY OF EPITAXIAL GROWTH OF GOLD ON NaCl(100)
                NaCl(100)襯底上金外延生長的實驗研究
            短句來源
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            查詢“epitaxial”譯詞為用戶自定義的雙語例句

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              epitaxial
            Ribbon epitaxial substrates made of Ni-Pd and Ni-W-Pd alloys for second-generation high-temperature superconductors
                  
            An X-ray epitaxial film interferometer as a tool for studying the structure of a semiconductor heterosystem
                  
            An X-ray epitaxial film interferometer is described that makes it possible to measure the deflections of the atomic planes of a film, which are parallel to the interface, with a sensitivity of several tenth of an angstrom.
                  
            The device was used for growing epitaxial Si layers with an Er concentration of 5×1018-1021 cm-3.
                  
            Heavy charged particle detectors based on high-resistivity epitaxial silicon layers
                  
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            A study of the low temperature epitaxy process for GaAs has been made together with evaluation of the quality of the epitaxial layers obtained. The surface morphology, growth rate, residual impurity level, electronic mobility deep impurity level and carrier concentration profile for low temperature epitaxy are discussed and compared with those for high temperature epitaxy. The results indicate that the low temperature epitaxy process is an acceptable method for the preparation of device quality GaAs layers....

            A study of the low temperature epitaxy process for GaAs has been made together with evaluation of the quality of the epitaxial layers obtained. The surface morphology, growth rate, residual impurity level, electronic mobility deep impurity level and carrier concentration profile for low temperature epitaxy are discussed and compared with those for high temperature epitaxy. The results indicate that the low temperature epitaxy process is an acceptable method for the preparation of device quality GaAs layers.

            本文研究了GaAs低溫氣相外延過程和評價了外延層的質量。對低溫外延時的表面形貌,生長速率,剩余雜質濃度,電子遷移率,深能級雜質和縱向濃度分布進行了討論,并與高溫外延進行了比較。結果表明,低溫外延是制備較高質量外延層的一種可取方法。

            CW Nd-YAG laser was used to investigate annealing behavior of <100> Si implanted with Bi ions. The backscattering and channeling measurments indicated that CW Nd-YAG laser annealing is one of nonmelting solid phase epitaxial regrowth process, which optimizes complete recovery of lattice damage and high substitutibility of Bi atoms without impurity redistribution. The experimental results were compared with pulsed Q-switched laser annealing, which induced surface layer melting and impurity redistribution....

            CW Nd-YAG laser was used to investigate annealing behavior of <100> Si implanted with Bi ions. The backscattering and channeling measurments indicated that CW Nd-YAG laser annealing is one of nonmelting solid phase epitaxial regrowth process, which optimizes complete recovery of lattice damage and high substitutibility of Bi atoms without impurity redistribution. The experimental results were compared with pulsed Q-switched laser annealing, which induced surface layer melting and impurity redistribution.

            本文報導用掃描Nd-YAG連續激光對<100>硅中注鉍的損傷層進行的退火研究。測量表明:退火能使離子注入造成的晶格損傷很好恢復,90%以上的鉍原子處于替代位置,雜質濃度的分布保持不變。文中對退火參數的選擇、均勻性,以及表面溫度升高、外延再生長層厚度等問題進行了討論。文末還將實驗結果與熔化型脈沖激光退火進行了比較。

            Measurements of the voltage-current characteristics and space-charge capacitance have been made on the epitaxial p-n junctions grown by method of silicon carbidt crystals sublimation. An analysis of the forward voltage-current and voltage-capacitance charateristics shows that the structures of the p-n junction may vary over a quite wide range, from typical p-i-n junctions to nearly linear graded junctions resulted from different epitaxial growth parameters, but most of them have intermidiate structures....

            Measurements of the voltage-current characteristics and space-charge capacitance have been made on the epitaxial p-n junctions grown by method of silicon carbidt crystals sublimation. An analysis of the forward voltage-current and voltage-capacitance charateristics shows that the structures of the p-n junction may vary over a quite wide range, from typical p-i-n junctions to nearly linear graded junctions resulted from different epitaxial growth parameters, but most of them have intermidiate structures. The effect of epitaxial growth parameters on structures of p-n junctions is briefly discussed.

            本工作測量了升華外延碳化硅p-n結的電流-電壓特性和空間電荷電容。通過對正向電流-電壓特性及電容-電壓特性的分析,表明:隨著外延生長條件的不同,這種p-n結的結構可以在相當寬的范圍內變化,從近于線性梯度結直到典型的p-i-n結,而大多數p-n結則介于這兩者之間。文中就外延生長條件對p-n結結構的影響進行了簡略的討論。 此外,還給出了升華外延碳化硅p-n結正向電發光的亮度-電流關系、光譜分布以及脈沖和交流激勵的測量結果。

             
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